Method of fabricating a semiconductor device

ABSTRACT

A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation application based on pending application Ser. No.17/028,042, filed Sep. 22, 2020, which in turn is a continuation ofapplication Ser. No. 16/243,415, filed Jan. 9, 2019, now U.S. Pat. No.10,847,611 B2, issued Nov. 24, 2020, the entire contents of both beinghereby incorporated by reference.

Korean Patent Application No. 10-2018-0071961, filed on Jun. 22, 2018,in the Korean Intellectual Property Office, and entitled: “SemiconductorDevice and Method of Fabricating The Same,” is incorporated by referenceherein in its entirety.

BACKGROUND 1. Field

Embodiments relate to a semiconductor device and a method of fabricatingthe same.

2. Description of the Related Art

Due to their small-sized, multifunctional, and/or low-costcharacteristics, semiconductor devices are important elements in theelectronics industry. Semiconductor devices may be, e.g., a memorydevice for storing data, a logic device for processing data, and ahybrid device including both of memory and logic elements.

SUMMARY

Embodiments are directed to a semiconductor device, including asubstrate including a first active pattern and a second active pattern,a device isolation layer filling a first trench between the first andsecond active patterns, the device isolation layer including a siliconoxide layer doped with helium, a helium concentration of the deviceisolation layer being higher than a helium concentration of the firstand second active patterns, and a gate electrode crossing the first andsecond active patterns.

Embodiments are also directed to a semiconductor device, including asubstrate, a device isolation layer on the substrate, the deviceisolation layer defining a first active pattern and a second activepattern of the substrate, and a gate electrode crossing the first andsecond active patterns. The device isolation layer may include a firstportion and a second portion, which are located below the gateelectrode, the first portion may be interposed between the first andsecond active patterns and covers a first sidewall of the first activepattern, the second portion may cover a second sidewall opposite to thefirst sidewall of the first active pattern, and a level of a top surfaceof the first portion may be different from a level of a top surface ofthe second portion.

Embodiments are also directed to a method of fabricating a semiconductordevice, including patterning a substrate to form active patterns, andforming a device isolation layer to fill a trench between the activepatterns, the forming of the device isolation layer including forming apreliminary insulating layer on the substrate to fill the trench,performing a first ion implantation process to inject a light speciesinto the preliminary insulating layer, and performing a wet annealingprocess on the preliminary insulating layer. The first ion implantationprocess may be performed at a temperature of 100° C. to 600° C., and thelight species may include at least one selected from the group of H, He,C, N, O, Ar, Kr and Xe.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of skill in the art by describingin detail example embodiments with reference to the attached drawings inwhich:

FIG. 1 illustrates a plan view illustrating a semiconductor deviceaccording to an example embodiment.

FIGS. 2A to 2C illustrate sectional views taken along lines A-A′, B-B′,and C-C′, respectively, of FIG. 1.

FIGS. 3, 5, 9, 11, and 13 illustrate plan views illustrating a method offabricating a semiconductor device, according to an example embodiment.

FIGS. 4A, 6A, 10A, 12A, and 14A illustrate sectional views taken alonglines A-A′ of FIGS. 3, 5, 9, 11, and 13, respectively.

FIGS. 4B, 6B, 10B, 12B, and 14B illustrate sectional views taken alonglines B-B′ of FIGS. 3, 5, 9, 11, and 13, respectively.

FIGS. 10C, 12C, and 14C illustrate sectional views taken along linesC-C′ of FIGS. 9, 11, and 13, respectively.

FIGS. 7A and 8A illustrate sectional views, which are taken along lineA-A′ of FIG. 5 and are presented to illustrate some steps in a processof forming a device isolation layer.

FIGS. 7B and 8B illustrate sectional views, which are taken along lineB-B′ of FIG. 5 and are presented to illustrate some steps in a processof forming a device isolation layer.

FIG. 15 illustrates a flow chart illustrating a method of forming adevice isolation layer.

FIGS. 16 and 18 illustrate plan views illustrating a method offabricating a semiconductor device, according to an example embodiment.

FIGS. 17 and 19A illustrate sectional views taken along lines A-A′ ofFIGS. 16 and 18, respectively.

FIG. 19B illustrates a sectional view taken along line B-B′ of FIG. 18.

FIG. 20 illustrates a plan view illustrating a semiconductor deviceaccording to an example embodiment.

FIGS. 21A to 21C illustrate sectional views taken along lines A-A′,B-B′, and C-C′, respectively, of FIG. 20.

FIGS. 22, 24, and 26 illustrate plan views illustrating a method offabricating a semiconductor device, according to an example embodiment.

FIGS. 23A, 25A, and 27A illustrate sectional views taken along linesA-A′ of FIGS. 22, 24, and 26, respectively.

FIGS. 23B, 25B, and 27B illustrate sectional views taken along linesB-B′ of FIGS. 22, 24, and 26, respectively.

FIG. 27C illustrates a sectional view taken along line C-C′ of FIG. 26.

FIG. 28 illustrates a graph showing a change in etch rate of an oxidelayer, which is caused by a hot ion implantation process.

DETAILED DESCRIPTION

It should be noted that the figures are intended to illustrate thegeneral characteristics of methods, structure and/or materials utilizedin certain example embodiments and to supplement the written descriptionprovided below. The drawings are not, however, to scale and may notprecisely reflect the precise structural or performance characteristicsof any given embodiment, and should not be interpreted as defining orlimiting the range of values or properties encompassed by exampleembodiments. For example, the relative thicknesses and positioning ofmolecules, layers, regions and/or structural elements may be reduced orexaggerated for clarity. The use of similar or identical referencenumbers in the various drawings is intended to indicate the presence ofa similar or identical element or feature.

FIG. 1 is a plan view illustrating a semiconductor device according toan example embodiment. FIGS. 2A to 2C are sectional views taken alonglines A-A′, B-B′, and C-C′, respectively, of FIG. 1.

Referring to FIG. 1 and FIGS. 2A to 2C, a substrate 100 including amemory cell region may be provided. As an example, a plurality of memorycell transistors constituting a plurality of SRAM cells may be providedon the memory cell region of the substrate 100.

A device isolation layer ST may be provided on the substrate 100. Thedevice isolation layer ST may be formed to define first and secondactive patterns AP1 and AP2. The substrate 100 may be a semiconductorsubstrate (e.g., of silicon, germanium, or silicon- germanium) or acompound semiconductor substrate. The device isolation layer ST may beformed of or include an insulating material (e.g., silicon oxide).

The first and second active patterns AP1 and AP2 may be portions of thesubstrate 100. The first and second active patterns AP1 and AP2 mayextend parallel to each other and in a second direction D2. A firsttrench TR1 may be defined between an adjacent pair of first activepatterns AP1. A second trench TR2 may be defined between the first andsecond active patterns AP1 and AP2 adjacent to each other. A depth ofthe second trench TR2 may be greater than a depth of the first trenchTR1. A bottom level of the second trench TR2 may be lower than a bottomlevel of the first trench TR1.

When measured in a first direction D1, an upper portion of the firsttrench TR1 may have a first width W1, and an upper portion of the secondtrench TR2 may have a second width W2. The second width W2 may begreater than the first width W1. A distance between the first and secondactive patterns AP1 and AP2 adjacent to each other may be greater than adistance between an adjacent pair of the first active patterns AP1.

The device isolation layer ST may be provided to fill the first andsecond trenches TR1 and TR2. The upper portions of the first and secondactive patterns AP1 and AP2 may extend in a vertical direction, therebyhaving a protruding shape relative to the device isolation layer ST.Each of the upper portions of the first and second active patterns AP1and AP2 may be a fin-shape structure vertically protruding above thedevice isolation layer ST.

The device isolation layer ST may further contain a material having arelatively small atomic weight. For example, the device isolation layerST may contain at least one light species that is selected from thegroup of H, He, C, N, Ar, Kr and Xe. The device isolation layer ST maycontain the light species as dopants. A concentration (e.g., atomicpercent) of the light species in the device isolation layer ST may behigher than that of the light species in the first and second activepatterns AP1 and AP2. As an example, the device isolation layer ST maycontain helium (He). A helium concentration of the device isolationlayer ST may be greater than a helium concentration of the first andsecond active patterns AP1 and AP2.

First channels CH1 and first source/drain patterns SD1 may be providedin or on the upper portions of the first active patterns AP1. Secondchannels CH2 and second source/drain patterns SD2 may be provided in oron the upper portions of the second active patterns AP2. The firstsource/drain patterns SD1 may be p-type impurity regions. The secondsource/drain patterns SD2 may be n-type impurity regions. Each of thefirst channels CH1 may be interposed between a pair of the firstsource/drain patterns SD1, and each of the second channels CH2 may beinterposed between a pair of the second source/drain patterns SD2.

The first and second source/drain patterns SD1 and SD2 may be epitaxialpatterns, which may be formed using a selective epitaxial growthprocess. The first and second source/drain patterns SD1 and SD2 may havetop surfaces that are located at a higher level than those of the firstand second channels CH1 and CH2. The first and second source/drainpatterns SD1 and SD2 may contain a semiconductor element, which may bethe same as or different from that of the substrate 100. As an example,the first source/drain patterns SD1 may be formed of or include asemiconductor material whose lattice constant is greater than that ofthe substrate 100. In this case, the first source/drain patterns SD1 mayexert a compressive stress to the first channels CH1. The firstsource/drain patterns SD1 may be formed of or include, e.g.,silicon-germanium (SiGe). The second source/drain patterns SD2 may beformed of or include the same semiconductor material as that of thesubstrate 100. The second source/drain patterns SD2 may be formed of orinclude, e.g., silicon (Si).

Gate electrodes GE may be provided to cross the first and second activepatterns AP1 and AP2 and to extend in the first direction D1. The gateelectrodes GE may be vertically overlapped with the first and secondchannels CH1 and CH2. As an example, the gate electrodes GE may beformed of or include at least one of conductive metal nitrides (e.g.,titanium nitride or tantalum nitride) or metallic materials (e.g.,titanium, tantalum, tungsten, copper, or aluminum).

An insulating pattern IL may be interposed between adjacent ones of thegate electrodes GE, in the first direction D1, as shown in FIG. 2C. Forexample, the insulating pattern IL may be used to separate the adjacentones of the gate electrodes GE from each other.

Gate spacers GS may be respectively provided on opposite sidewalls ofeach of the gate electrodes GE. The gate spacers GS may extend along thegate electrodes GE or in the first direction D1. Top surfaces of thegate spacers GS may be higher than top surfaces of the gate electrodesGE. The top surfaces of the gate spacers GS may be coplanar with a topsurface of a first interlayer insulating layer 110, which will bedescribed below. The gate spacers GS may be formed of or include atleast one of SiO₂, SiCN, SiCON, or SiN. In some example embodiments, thegate spacers GS may include a multi-layered structure that is made of atleast two of SiO₂, SiCN, SiCON, or SiN.

Gate dielectric patterns GI may be interposed between the gateelectrodes GE and the first and second active patterns AP1 and AP2. Eachof the gate dielectric patterns GI may extend along a bottom surface ofa corresponding one of the gate electrodes GE. Each of the gatedielectric patterns GI may be provided to cover top and two sidesurfaces of each of the first and second channels CH1 and CH2. The gatedielectric patterns GI may be formed of or include at least one high-kdielectric material. For example, the high-k dielectric materials may beformed of or include at least one of hafnium oxide, hafnium siliconoxide, lanthanum oxide, zirconium oxide, zirconium silicon oxide,tantalum oxide, titanium oxide, barium strontium titanium oxide, bariumtitanium oxide, strontium titanium oxide, lithium oxide, aluminum oxide,lead scandium tantalum oxide, or lead zinc niobate.

Gate capping patterns GP may be provided on each of the gate electrodesGE. The gate capping patterns GP may extend along the gate electrodes GEor in the first direction D1. The gate capping pattern GP may beinterposed between a pair of the gate spacers GS. The gate cappingpatterns GP may be formed of or include a material that is selected tohave an etch selectivity with respect to first to fourth interlayerinsulating layers 110, 120, 130, and 140 to be described below. Forexample, the gate capping patterns GP may be formed of or include atleast one of SiON, SiCN, SiCON, or SiN.

The first interlayer insulating layer 110 may be provided on thesubstrate 100. The first interlayer insulating layer 110 may cover thegate spacers GS and the first and second source/drain patterns SD1 andSD2. The first interlayer insulating layer 110 may have a top surfacethat is substantially coplanar with top surfaces of the gate cappingpatterns GP and top surfaces of the gate spacers GS. The secondinterlayer insulating layer 120 may be provided on the first interlayerinsulating layer 110 to cover the top surfaces of the gate cappingpatterns GP and the top surfaces of the gate spacers GS.

Active contacts AC may be provided at opposite sides of each of the gateelectrodes GE. The active contacts AC may be provided to penetrate thesecond interlayer insulating layer 120 and the first interlayerinsulating layer 110, and may be coupled to the first and secondsource/drain patterns SD1 and SD2. The active contacts AC may have topsurfaces that are coplanar with the top surface of the second interlayerinsulating layer 120. The active contacts AC may be formed of or includeat least one conductive metal nitride (e.g., titanium nitride ortantalum nitride) or metallic material (e.g., titanium, tantalum,tungsten, copper, or aluminum).

Gate contacts GC may be provided on the gate electrodes GE. Each of thegate contacts GC may be provided to penetrate the second interlayerinsulating layer 120, the first interlayer insulating layer 110, and thegate capping pattern GP and may be coupled to the gate electrode GE. Thegate contacts GC may have top surfaces that are coplanar with the topsurface of the second interlayer insulating layer 120. The gate contactsGC may have bottom surfaces that are located at a higher level than thatof bottom surfaces of the active contacts AC.

The gate contacts GC may be formed of or include at least one conductivemetal nitride (e.g., titanium nitride or tantalum nitride) or metallicmaterial (e.g., titanium, tantalum, tungsten, copper, or aluminum). Thegate contacts GC may be formed of or include the same material as theactive contacts AC. As an example, one of the gate contacts GC may beelectrically connected to at least one of the active contacts AC,thereby constituting a single conductive structure.

FIGS. 3, 5, 9, 11, and 13 are plan views illustrating a method offabricating a semiconductor device according to an example embodiment.FIGS. 4A, 6A, 10A, 12A, and 14A are sectional views taken along linesA-A′ of FIGS. 3, 5, 9, 11, and 13, respectively. FIGS. 4B, 6B, 10B, 12B,and 14B are sectional views taken along lines B-B′ of FIGS. 3, 5, 9, 11,and 13, respectively. FIGS. 10C, 12C, and 14C are sectional views takenalong lines C-C′ of FIGS. 9, 11, and 13, respectively. FIGS. 7A and 8Aare sectional views, which are taken along line A-A′ of FIG. 5 and arepresented to illustrate some steps in a process of forming a deviceisolation layer. FIGS. 7B and 8B are sectional views, which are takenalong line B-B′ of FIG. 5 and are presented to illustrate some steps ina process of forming a device isolation layer. FIG. 15 is a flow chartillustrating a method of forming a device isolation layer.

Referring to FIGS. 3, 4A, and 4B, the substrate 100 may be patterned toform the first and second active patterns AP1 and AP2. The substrate 100may be a semiconductor substrate (e.g., of silicon, germanium, orsilicon-germanium) or a compound semiconductor substrate. For example,the formation of the first and second active patterns AP1 and AP2 mayinclude forming mask patterns on the substrate 100 and anisotropicallyetching the substrate 100 using the mask patterns as an etch mask.

The first trench TR1 may be formed between an adjacent pair of the firstactive patterns AP1. The second trench TR2 may be formed between thefirst and second active patterns AP1 and AP2 adjacent to each other. Adistance between an adjacent pair of the first active patterns AP1 maybe a first distance L1, and a distance between the first and secondactive patterns AP1 and AP2 adjacent to each other may be a seconddistance L2. The second distance L2 may be greater than the firstdistance L1. The second trench TR2 may be formed to have a depth greaterthan that of the first trench TR1. A width (e.g., W2 of FIG. 2C) of anupper portion of the second trench TR2 may be greater than a width(e.g., W1 of FIG. 2C) of an upper portion of the first trench TR1.

Referring to FIGS. 5, 6A, 6B, and 15, a preliminary insulating layer PILmay be formed on the substrate 100 to fill the first and second trenchesTR1 and TR2 (in S10). The formation of the preliminary insulating layerPIL may be performed using, e.g., a low-pressure chemical vapordeposition (LPCVD) process, a plasma CVD process, or a flowable CVD(FCVD) process. In some example embodiments, the preliminary insulatinglayer PIL may be formed by a FCVD process. In the FCVD process, aflowable dielectric material may be used as a precursor for thepreliminary insulating layer PIL. Thus, the first trench TR1 having arelatively small width may be completely filled with the preliminaryinsulating layer PIL.

The flowable dielectric material may include a silicon-containingprecursor. The precursor may be formed of or include at least oneselected from the group of silicate, siloxane, methyl silsesquioxane(MSQ), hydrogen silsesquioxane (HSQ), perhydropolysilazane (PSZ),tetraethyl orthosilicate (TEOS), and trisilylamine (TSA). As an example,perhydropolysilazane (PSZ) may be used as the precursor for forming thepreliminary insulating layer PIL.

With regard to a chemical structure of a portion M of the preliminaryinsulating layer PIL, the preliminary insulating layer PIL may include apolymer having a repeating unit represented by H₂Si—NH (e.g., thepolymer represented by [H₂Si—NH]_(n), where n is an integer greater thanor equal to 1). The preliminary insulating layer PIL may include Si—N,Si—H, and N—H bonds.

A bake process may be performed on the preliminary insulating layer PIL,and in this case, an oxygen source may be provided on the preliminaryinsulating layer PIL (in S20). The bake process may be performed at afirst temperature. The first temperature may range from 100° C. to 500°C. The oxygen source may include oxygen (O₂) and/or ozone (O₃). Owing tothe bake process, the oxygen source may be infiltrated into thepreliminary insulating layer PIL. Thus, the bake process may cause anincrease in oxygen content of the preliminary insulating layer PIL. Insome example embodiments, the bake process and the process of providingthe oxygen source may be omitted.

Referring to FIGS. 5, 7A, 7B, and 15, a hot ion implantation process HIPmay be performed on the preliminary insulating layer PIL (in S30). Thehot ion implantation process HIP may be performed at a secondtemperature. The second temperature may range from 100° C. to 600° C.

The hot ion implantation process HIP may be performed using a material(i.e., element) having a relatively small atomic weight. As an example,the hot ion implantation process HIP may be performed using at least onelight species selected from the group of H, He, C, N, O, Si, Ar, Ge, Kr,and Xe. As another example, the hot ion implantation process HIP may beperformed using at least one light species selected from the group of H,He, C, N, O, Ar, Kr, and Xe.

In an example embodiment, the chemical elements in group 13 (i.e., borongroup) and the chemical elements in group 15 (i.e., pnictogen group) arenot used in the hot ion implantation process HIP. This is because, ifthe chemical elements in groups 13 and 15 are injected into the firstand second active patterns AP1 and AP2, electric characteristics of thefirst and second active patterns AP1 and AP2 may be affected by thechemical elements in groups 13 and 15.

In another example embodiment, nitrogen, which is one of the chemicalelements in group 15 (i.e., pnictogen group), may have low reactivity,and thus, nitrogen may be used in the hot ion implantation process HIP.

In an example embodiment, the hot ion implantation process HIP may beperformed using helium (He).

By controlling power of the hot ion implantation process HIP, an ion IOmay be infiltrated into an inner portion of the preliminary insulatinglayer PIL that fills the first and second trenches TR1 and TR2. As anexample, during the hot ion implantation process HIP, energy of theinjected ion IO may range from 10 keV to 150 keV and dose of theinjected ion IO may range from 1.00 E13/cm² to 1.00 E17/cm².

The ion IO may be injected into the preliminary insulating layer PIL andmay be used to break at least one of Si—N, Si—H, and N—H bonds. Forexample, since the accelerated ion IO has a relatively high energy, theSi—N bond, the Si—H bond, or the N—H bond may be broken by collisionwith the ion IO, and nitrogen and hydrogen released by breaking of theSi—N, Si—H, and N—H bonds may be eliminated from the preliminaryinsulating layer PIL in the form of NH₃ and H₂.

As a result of the bake process and the oxygen source providing process,the oxygen content in the preliminary insulating layer PIL may beincreased. A silicon atom formed by breaking the bond with the nitrogenatom may be bonded with an oxygen atom. A silicon atom formed bybreaking the bond with the hydrogen atom may be bonded with an oxygenatom.

By using the hot ion implantation process HIP, the ion IO may beuniformly injected into the preliminary insulating layer PIL in thefirst trench TR1 having a relatively small width.

If the hot ion implantation process HIP were to be performed at a lowtemperature of 100° C. or lower, the Si—N, Si—H, and N—H bonds may notbe broken by the ion IO. Furthermore, the ion IO may lead to anundesirable damage of the preliminary insulating layer PIL. Thus, thepreliminary insulating layer PIL in the first trench TR1 may not betransformed to a silicon oxide layer, and defects may occur in thepreliminary insulating layer PIL.

Referring to FIGS. 5, 8A, 8B, and 15, a wet annealing process WAN may beperformed on the preliminary insulating layer PIL (in S40). The wetannealing process WAN may be performed at a third temperature to reactthe densified preliminary insulating layer PIL with water. The thirdtemperature may range from 100° C. to 900° C. The wet annealing processWAN may be performed using H₂O, H₂O₂, O₂, and/or O₃. As a result of thewet annealing process WAN, oxygen atoms may be infiltrated into thepreliminary insulating layer PIL and may be bonded with silicon atoms.As discussed above, the polymer of the preliminary insulating layer PILmay include H₂Si—NH moieties, which moieties, by reaction with water(H₂O) in the wet annealing process WAN, are converted to silicon oxide(SiO₂) while eliminating ammonia (NH₃) and hydrogen (H₂). Thus, thepreliminary insulating layer PIL may be transformed to a silicon oxidelayer (SiO₂) preliminary insulating layer PIL using the wet annealingprocess WAN.

FIG. 28 is a graph showing a change in etch rate of an oxide layercaused by a hot ion implantation process.

A flowable chemical vapor deposition process (FCVD) usingperhydropolysilazane (PSZ) was performed on a silicon wafer to form apreliminary insulating layer to a thickness of 5000 Å.

For Example Embodiment 1, a hot ion implantation process using helium(He) was performed on the preliminary insulating layer at a temperatureof 500° C., and a wet annealing process was performed at a temperatureof 600° C. to form an oxide layer from the preliminary insulating layer.

For Comparative Example 1, an ion implantation process using helium (He)was performed on the preliminary insulating layer at a room temperatureof 25° C., and a wet annealing process was performed at a temperature of600° C. to form an oxide layer from the preliminary insulating layer.

For Comparative Example 2, an ion implantation process was omitted, andonly a wet annealing process was performed at a temperature of 600° C.to form an oxide layer from the preliminary insulating layer.

An etching process using hydrofluoric acid (HF) was performed on theoxide layers according to Example Embodiment 1 and Comparative Examples1 and 2, and then, etch rates of the oxide layers summarized in FIG. 28were measured.

Referring to FIG. 28, the etch rate of the oxide layer was lowest in theExample Embodiment 1 and highest in the Comparative Example 1. Thus, theoxide layer according to the Example Embodiment 1 had a low etch rate.Without being bound by theory, it is believed that the low etch rate wasexhibited because the hot ion implantation process allows the oxidelayer to have a defect-free or densified structure. Meanwhile, the oxidelayer of the Comparative Example 1 had an etch rate higher than that ofthe oxide layer of the Comparative Example 2, from which the ionimplantation process was omitted. Without being bound by theory, it isbelieved that this is because the preliminary insulating layer wasdamaged by the ion implantation process performed at the roomtemperature, thereby producing many defects in the oxide layer.

Referring again to FIGS. 5, 8A, 8B, and 15, if the first trench TR1 hasa relatively small width, there may be a difficulty in effectivelyinjecting oxygen atoms into the preliminary insulating layer PIL in thefirst trench TR1. In the case where the hot ion implantation process HIP(in S30) is not performed, the preliminary insulating layer PIL in thefirst trench TR1 may not be sufficiently reacted with oxygen atoms, andthus, Si—N, Si—H, and N—H bonds may remain as they are. Thus, thepreliminary insulating layer PIL in the first trench TR1 may not betransformed to a silicon oxide (SiO₂) layer.

By contrast, in the method of forming the device isolation layer STaccording to an example embodiment, the hot ion implantation process HIPmay be performed to break Si—N, Si—H, and N—H bonds in the preliminaryinsulating layer PIL, which is provided in the first trench TR1, inadvance. Thereafter, the wet annealing process WAN may be performed tocompletely transform the preliminary insulating layer PIL in the firsttrench TR1 to a silicon oxide layer. As a result, it may be possible toform a densified device isolation layer ST from the preliminaryinsulating layer PIL.

In the case where a high temperature wet annealing is performed tooxidize a flowable dielectric material filling the first and secondtrenches TR1 and TR2, a volume of the flowable dielectric material maybe generally reduced, and thus, may exert a tensile stress to the firstand second active patterns AP1 and AP2 adjacent thereto. As a result,the first and second active patterns AP1 and AP2 may be deformed.According to some example embodiments, the hot ion implantation processHIP is used in connection with oxidizing the flowable dielectricmaterial. Thus, it may be possible to substantially prevent a change involume of the flowable dielectric material. Thus, it may be possible toreduce a stress to be applied to the first and second active patternsAP1 and AP2 covered with the preliminary insulating layer PIL. Forexample, a compressive stress or a reduced tensile stress may be exertedto the first and second active patterns AP1 and AP2. As a result, it maybe possible to prevent the first and second active patterns AP1 and AP2from being deformed.

After the wet annealing process WAN, a dry annealing process may beperformed. The dry annealing process may be performed at a temperatureof about 1000° C., and nitrogen (N₂) may be used for the dry annealingprocess. The light species doped in the first and second active patternsAP1 and AP2 may be removed as a result of the wet annealing process WANand the dry annealing process, while, in the preliminary insulatinglayer PIL, only some of the doped light species may be removed, andothers of the doped light species may remain. As a result, aconcentration of the light species in the preliminary insulating layerPIL may be higher than a concentration of the light species in the firstand second active patterns AP1 and AP2.

Referring to FIGS. 9, 10A to 10C, and 15, the silicon oxide preliminaryinsulating layer PIL may be recessed to expose the upper portions of thefirst and second active patterns AP1 and AP2, and as a result, thesilicon oxide device isolation layer ST may be formed (in S50). Theupper portions of the first and second active patterns AP1 and AP2 maybe partially etched during the recessing of the preliminary insulatinglayer PIL.

Sacrificial patterns PP may be formed to cross the first and secondactive patterns AP1 and AP2. The sacrificial patterns PP may beline-shaped patterns extending in the first direction D1. For example,the formation of the sacrificial patterns PP may include forming asacrificial layer on the substrate 100, forming mask patterns MA on thesacrificial layer, and patterning the sacrificial layer using the maskpatterns MA as an etch mask. The sacrificial layer may be formed of orinclude a poly-silicon layer.

A pair of the gate spacers GS may be formed on opposite sidewalls ofeach of the sacrificial patterns PP. The gate spacers GS may be formedon opposite sidewalls of each of the upper portions of the first andsecond active patterns AP1 and AP2. The formation of the gate spacers GSmay include conformally forming a spacer layer on the substrate 100, andanisotropically etching the spacer layer. The spacer layer may be formedof or include at least one of SiO₂, SiCN, SiCON, or SiN. In some exampleembodiments, the spacer layer may be a multi-layered structure that ismade of at least two of SiO₂, SiCN, SiCON, or SiN.

Referring to FIGS. 11 and 12A to 12C, the first and second source/drainpatterns SD1 and SD2 may be formed at opposite sides of each of thesacrificial patterns PP. The first source/drain patterns SD1 may beformed on the upper portions of the first active patterns AP1, and thesecond source/drain patterns SD2 may be formed on the upper portions ofthe second active patterns AP2.

The first and second source/drain patterns SD1 and SD2 may be formed by,e.g., a selective epitaxial growth process, in which the substrate 100may be used as a seed layer. As an example, the selective epitaxialgrowth process may include a chemical vapor deposition (CVD) process ora molecular beam epitaxy (MBE) process.

First, the first and second active patterns AP1 and AP2 may beselectively etched at opposite sides of each of the sacrificial patternsPP. During the etching of the first and second active patterns AP1 andAP2, an upper portion of the device isolation layer ST may be partiallyetched. A portion of the device isolation layer ST located below thesacrificial patterns PP may not be etched.

The first and second source/drain patterns SD1 and SD2 may berespectively formed using the etched first and second active patternsAP1 and AP2 as a seed layer. As a result of the formation of the firstsource/drain patterns SD1, a first channel CH1 may be defined between apair of the first source/drain patterns SD1. As a result of theformation of the second source/drain patterns SD2, a second channel CH2may be defined between a pair of the second source/drain patterns SD2.

Referring to FIGS. 13 and 14A to 14C, the first interlayer insulatinglayer 110 may be formed to cover the first and second source/drainpatterns SD1 and SD2, the gate spacers GS, and the mask patterns MA. Asan example, the first interlayer insulating layer 110 may be formed ofor include a silicon oxide layer.

Another hot ion implantation process HIP (e.g., substantially the sameas the hot implantation process HIP described above in connection withoperation S30) may be performed on the first interlayer insulating layer110. The hot ion implantation process HIP may provide the firstinterlayer insulating layer 110 with an increased density. For example,the hot ion implantation process HIP may be performed to prevent a voidfrom being formed in the first interlayer insulating layer 110 betweenthe sacrificial patterns PP.

Referring back to FIGS. 1 and 2A to 2C, the first interlayer insulatinglayer 110 may be planarized to expose top surfaces of the sacrificialpatterns PP. The planarization of the first interlayer insulating layer110 may be performed using, e.g., an etch-back or chemical-mechanicalpolishing (CMP) process. As a result, the first interlayer insulatinglayer 110 may have a top surface that is substantially coplanar withexposed top surfaces of the sacrificial patterns PP, and the topsurfaces of the gate spacers GS may be formed to be coplanar with thetop surfaces of the sacrificial patterns PP.

The sacrificial patterns PP may be replaced with the gate electrodes GEand the insulating pattern IL. For example, an anisotropic etchingprocess may be performed on the exposed sacrificial patterns PP. Theanisotropic etching process may be performed to selectively remove onlythe sacrificial patterns PP. The insulating pattern IL may be formed inpart of the empty spaces formed by removing the sacrificial patterns PP.The gate dielectric patterns GI and the gate electrodes GE may be formedin the remaining regions of the empty spaces, except for the insulatingpattern IL.

The gate dielectric patterns GI may be conformally formed by, e.g., anatomic layer deposition (ALD) process or a chemical oxidation process.As an example, the gate dielectric pattern GI may be formed of orinclude a high-k dielectric material. The gate electrodes GE may beformed by forming a gate electrode layer on the gate dielectric patternsGI and planarizing the gate electrode layer. As an example, the gateelectrode layer may be formed of or include at least one of conductivemetal nitrides or metallic materials.

Upper portions of the gate electrodes GE may be selectively etched torecess the gate electrodes GE. The recessed top surfaces of the gateelectrodes GE may be lower than the top surface of the first interlayerinsulating layer 110 and the top surfaces of the gate spacers GS. Thegate capping patterns GP may be formed on the recessed gate electrodesGE. The formation of the gate capping patterns GP may include forming agate capping layer to cover the recessed gate electrodes GE andplanarizing the gate capping layer to expose the top surface of thefirst interlayer insulating layer 110. As an example, the gate cappinglayer may be formed of or include at least one of SiON, SiCN, SiCON, orSiN.

The second interlayer insulating layer 120 may be formed on the firstinterlayer insulating layer 110 to cover the gate capping patterns GP.The active contacts AC may be formed to penetrate the second interlayerinsulating layer 120 and the first interlayer insulating layer 110 andmay be coupled to the first and second source/drain patterns SD1 andSD2. The gate contacts GC may be formed to penetrate the secondinterlayer insulating layer 120 and the gate capping patterns GP and maybe connected to the gate electrodes GE. The formation of the activecontacts AC and gate contacts GC may include forming holes to definepositions and shapes of the active contacts AC and gate contacts GC andforming a conductive layer to fill the holes. The conductive layer maybe formed of or include at least one of metal nitrides or metallicmaterials.

FIGS. 16 and 18 are plan views illustrating a method of fabricating asemiconductor device, according to an example embodiment. FIGS. 17 and19A are sectional views taken along lines A-A′ of FIGS. 16 and 18,respectively. FIG. 19B is a sectional view taken along line B-B′ of FIG.18.

In the following description, an element previously described withreference to FIGS. 3 to 15, may be identified by the same referencenumber without repeating an overlapping description thereof.

Referring to FIGS. 16 and 17, a high energy ion implantation process onthe substrate 100 may be performed to form a first lower impurity regionLDR1 and a second lower impurity region LDR2. PMOSFETs may be formed onthe first lower impurity region LDR1 through a subsequent process, andNMOSFETs may be formed on the second lower impurity region LDR2 througha subsequent process.

The formation of the first lower impurity region LDR1 may includeforming a first deep well region DWL1 in a region for the PMOSFETs andforming a first shallow well region SWL1 on the first deep well regionDWL1. For example, a first mask layer (not shown) may be formed on thesubstrate 100 to define a position or a shape of a region, in which thefirst lower impurity region LDR1 will be formed. The first mask layermay be formed to expose the region for the first lower impurity regionLDR1. A first ion implantation process may be performed to form thefirst deep well region DWL1. A second ion implantation process may beperformed to form the first shallow well region SWL1 on the first deepwell region DWL1. The first and second implantation processes may beperformed using impurities such as phosphorus (P), antimony (Sb), orarsenic (As).

The formation of the second lower impurity region LDR2 may includeforming a second deep well region DWL2 in a region for the NMOSFETs andforming a second shallow well region SWL2 on the second deep well regionDWL2. For example, a second mask layer (not shown) may be formed on thesubstrate 100 to define a position or a shape of a region, in which thesecond lower impurity region LDR2 will be formed. The second mask layermay be formed to expose the region for the second lower impurity regionLDR2. A third ion implantation process may be performed to form thesecond deep well region DWL2. The fourth ion implantation process may beperformed to form the second shallow well region SWL2 on the second deepwell region DWL2. The third and fourth ion implantation processes may beperformed using impurities, such as boron (B), gallium (Ga), or indium(In).

When the first to fourth ion implantation processes are performed, theannealing process may be performed. As a result of the annealingprocess, impurities in the first and second lower impurity regions LDR1and LDR2 may be diffused. The annealing process may be performed usingone of low temperature soak annealing, flash lamp annealing, laserannealing, and spike annealing processes.

Referring to FIGS. 18, 19A, and 19B, the substrate 100 provided with thefirst and second lower impurity regions LDR1 and LDR2 may be patternedto form the first and second active patterns AP1 and AP2. The first andsecond active patterns AP1 and AP2 may be formed on the first and secondlower impurity regions LDR1 and LDR2, respectively.

Subsequent processes may be performed in substantially the same manneras that of the previous embodiments described with reference to FIGS. 5to 15. For example, the preliminary insulating layer PIL may be formedand converted to silicon oxide and patterned to form the deviceisolation layer ST containing silicon oxide.

If the preliminary insulating layer PIL were to be oxidized by a hightemperature annealing process at a temperature of 800° C. or higher,there may be an impurity-intermixing issue between the first deep wellregion DWL1, the first shallow well region SWL1, the second deep wellregion DWL2, and the second shallow well region SWL2. In the presentexample embodiment, the hot ion implantation process HIP may beperformed at a temperature of about 100° C.-600° C. Thus, it may bepossible to effectively oxidize the preliminary insulating layer PILwithout the impurity intermixing issue between the impurity regions.

If the above-described first to fourth ion implantation processes wereto be performed after the formation of the first and second activepatterns AP1 and AP2, lattice defects (e.g., stacking faults) couldoccur in the first and second active patterns AP1 and AP2, due to thehigh energy condition in the first to fourth ion implantation processes.In the present example embodiment, the first and second lower impurityregions LDR1 and LDR2 may be formed in the substrate 100 by performingthe first to fourth ion implantation processes before the formation ofthe first and second active patterns AP1 and AP2. Thus, even when thefirst to fourth ion implantation processes are performed under the highenergy condition, it may be possible to prevent the lattice defects fromoccurring in the first and second active patterns AP1 and AP2.

If the device isolation layer ST were to be formed by the wet annealingprocess WAN without the above-described hot ion implantation process HIP(in S30) to completely oxidize the preliminary insulating layer PIL, itmay then be necessary to increase a process temperature of the wetannealing process WAN, e.g., to a temperature that is higher than 900°C., in which case impurities in the first and second lower impurityregions LDR1 and LDR2 could diffuse so as to deteriorate a junctionisolation property between the first and second lower impurity regionsLDR1 and LDR2. In the present example embodiment, the hot ionimplantation process HIP (in S30) is performed before the wet annealingprocess WAN. Thus, the preliminary insulating layer PIL may becompletely oxidized using the wet annealing process WAN performed at arelatively low temperature (ranging from 100° C. to 900° C.). The wetannealing process WAN may be performed at a relatively low temperature,thus helping to avoid deterioration of a junction isolation propertybetween the first and second lower impurity regions LDR1 and LDR2.

FIG. 20 is a plan view illustrating a semiconductor device according toan example embodiment. FIGS. 21A to 21C are sectional views taken alonglines A-A′, B-B′, and C-C′, respectively, of FIG. 20.

In the following description, an element previously described withreference to FIG. 1 and FIGS. 2A to 2C, may be identified by the samereference number without repeating an overlapping description thereof.

Referring to FIGS. 20 and 21A to 21C, at least one logic cell may beprovided on the substrate 100. Logic transistors constituting the logiccircuit of the semiconductor device may be disposed in the logic cell.As an example, logic transistors constituting a processor core or an I/Oterminal may be provided on a logic cell region of the substrate 100.

The substrate 100 may include a PMOSFET region PR and an NMOSFET regionNR. The PMOSFET region PR and the NMOSFET region NR may be defined by afourth trench TR4, which is formed in an upper portion of the substrate100. Thus, the fourth trench TR4 may be formed between the PMOSFETregion PR and the NMOSFET region NR. The PMOSFET region PR and theNMOSFET region NR may be spaced apart from each other in the firstdirection D1 with the fourth trench TR4 interposed therebetween. ThePMOSFET region PR and the NMOSFET region NR may extend in the seconddirection D2 crossing the first direction D1.

A plurality of active patterns AP1 and AP2 may be provided on thePMOSFET region PR and the NMOSFET region NR to extend in the seconddirection D2. The active patterns AP1 and AP2 may include the firstactive patterns AP1 on the PMOSFET region PR and the second activepatterns AP2 on the NMOSFET region NR. The first and second activepatterns AP1 and AP2 may be portions (e.g., vertically protrudingportions) of the substrate 100. A third trench TR3 may be definedbetween adjacent ones of the first active patterns AP1 and betweenadjacent ones of the second active patterns AP2.

The device isolation layer ST may be provided to fill the third andfourth trenches TR3 and TR4. The device isolation layer ST may include afirst device isolation layer ST1 filling the third trench TR3 and asecond device isolation layer ST2 filling the fourth trench TR4. Thefirst and second device isolation layers ST1 and ST2 may be formed of orinclude the same insulating material (e.g., silicon oxide). Thus, thefirst and second device isolation layers ST1 and ST2 may be connected toeach other, thereby constituting a single isolation structure (e.g., thedevice isolation layer ST). The upper portions of the first and secondactive patterns AP1 and AP2 may extend in a vertical direction, therebyhaving a protruding shape relative to the first device isolation layerST1.

The second device isolation layer ST2 may be deeper than the firstdevice isolation layer ST1. For example, a level of a bottom surface ofthe second device isolation layer ST2 may be lower than a level of abottom surface of the first device isolation layer ST1.

The first device isolation layer ST1, which is positioned below the gateelectrode GE to be described below, may include a first portion P1 and asecond portion P2. For example, the first portion P1 may be a portion ofthe first device isolation layer ST1 provided on a first sidewall SW1 ofthe second active pattern AP2, and the second portion P2 may be anotherportion of the first device isolation layer ST1 provided on a secondsidewall SW2 of the second active pattern AP2. The second sidewall SW2may be opposite to the first sidewall SW1.

The first portion P1 may be interposed between a pair of the secondactive patterns AP2, and the second portion P2 may be interposed betweenthe second device isolation layer ST2 and the second active pattern AP2.The first portion P1 may have a first top surface TS1, and the secondportion P2 may have a second top surface TS2. The first top surface TS1may be positioned at a first level LV1, and the second top surface TS2may be positioned at a second level LV2. The first level LV1 and thesecond level LV2 may be different from each other. As an example, thefirst level LV1 may be higher than the second level LV2. The seconddevice isolation layer ST2 below the gate electrode GE may have a thirdtop surface TS3. The third top surface TS3 may be positioned at the samelevel (e.g., the second level LV2) as the second top surface TS2.

The second active pattern AP2 (or the second channel CH2) below the gateelectrode GE may have a first height H1 from the first top surface TS1.The first height H1 may be a vertical distance between a top surface ofthe second active pattern AP2 and the first top surface TS1. The secondactive pattern AP2 (or the second channel CH2) below the gate electrodeGE may have a second height H2 from the second top surface TS2. Thesecond height H2 may be a vertical distance between the top surface ofthe second active pattern AP2 and the second top surface TS2. The secondheight H2 may be greater than the first height H1.

The first channels CH1 and the first source/drain patterns SD1 may beprovided in or on the upper portions of the first active patterns AP1.The second channels CH2 and the second source/drain patterns SD2 may beprovided in or on the upper portions of the second active patterns AP2.The first source/drain patterns SD1 may be p-type impurity regions. Thesecond source/drain patterns SD2 may be n-type impurity regions. Thefirst and second source/drain patterns SD1 and SD2 may be epitaxialpatterns, which may be formed using a selective epitaxial growthprocess.

The gate electrodes GE may be provided to cross the first and secondactive patterns AP1 and AP2 and to extend in the second direction D2.The gate electrodes GE may be spaced apart from each other in the firstdirection D1. As an example, the gate electrodes GE may be formed of orinclude at least one of conductive metal nitrides or metallic materials.A pair of the gate spacers GS may be respectively provided on theopposite sidewalls of each of the gate electrodes GE. The gatedielectric patterns GI may be interposed between the gate electrodes GEand the first and second active patterns AP1 and AP2. The gate cappingpattern GP may be provided on each of the gate electrodes GE.

The first interlayer insulating layer 110 may be provided on thesubstrate 100. The first interlayer insulating layer 110 may cover thegate spacers GS and the first and second source/drain patterns SD1 andSD2. The second interlayer insulating layer 120 may be provided on thefirst interlayer insulating layer 110 to cover the top surfaces of thegate capping patterns GP and the top surfaces of the gate spacers GS.

The active contacts AC may be provided at the opposite sides of each ofthe gate electrodes GE. The active contacts AC may be provided topenetrate the second interlayer insulating layer 120 and the firstinterlayer insulating layer 110 and may be coupled to the first andsecond source/drain patterns SD1 and SD2.

FIGS. 22, 24, and 26 are plan views illustrating a method of fabricatinga semiconductor device, according to an example embodiment. FIGS. 23A,25A, and 27A are sectional views taken along lines A-A′ of FIGS. 22, 24,and 26, respectively. FIGS. 23B, 25B, and 27B are sectional views takenalong lines B-B′ of FIGS. 22, 24, and 26, respectively. FIG. 27C is asectional view taken along line C-C′ of FIG. 26.

In the following description, an element previously described withreference to FIGS. 3 to 15, may be identified by the same referencenumber without repeating an overlapping description thereof.

Referring to FIGS. 22, 23A, and 23B, the substrate 100 may be patternedto form active patterns AP. The active patterns AP may be formed to havea constant space (or pitch). The first trench TR1 may be formed betweenan adjacent pair of the active patterns AP. The first trenches TR1 maybe formed to have substantially the same depth.

The first device isolation layer ST1 may be formed to fill the firsttrenches TR1. The first device isolation layer ST1 may be formed bysubstantially the same method as that for the device isolation layer STpreviously described with reference to FIG. 15. By forming the firstdevice isolation layer ST1 by the above-described method, the firstdevice isolation layer ST1 filling the first trench TR1 may bedensified. The first device isolation layer ST1 filling the first trenchTR1 may include a silicon oxide (SiO₂) layer formed by completelyoxidizing a preliminary insulating layer. A planarization process may beperformed on the first device isolation layer ST1 to expose top surfacesof the active patterns AP.

Referring to FIGS. 24, 25A, and 25B, the substrate 100 may be patternedthe fourth trenches TR4 defining the PMOSFET region PR and the NMOSFETregion NR. The fourth trench TR4 may be interposed between the PMOSFETregion PR and the NMOSFET region NR. The fourth trench TR4 may be formedto have a depth greater than that of the first trench TR1.

During the patterning process, the active patterns AP may be partiallyremoved to form the first active patterns AP1 remaining on the PMOSFETregion PR and the second active patterns AP2 remaining on the NMOSFETregion NR. A portion of the first device isolation layer ST may beremoved during the patterning process.

The second device isolation layer ST2 may be formed to fill the fourthtrenches TR4. The formation of the second device isolation layer ST2 mayinclude forming a silicon oxide layer (e.g., undoped silicate glass(USG)) using, e.g., a chemical vapor deposition (CVD) process,performing a hot ion implantation process on the silicon oxide layer,and performing a dry annealing process on the silicon oxide layer. Thehot ion implantation process may be performed in substantially the samemanner as the hot ion implantation process HIP described with referenceto FIGS. 5, 7A, 7B, and 15. By using the hot ion implantation processHIP in forming the second device isolation layer ST2, the second deviceisolation layer ST2 may be densified. The first and second deviceisolation layers ST1 and ST2 may constitute a single isolation structure(e.g., the device isolation layer ST).

Referring to FIGS. 26 and 27A to 27C, the device isolation layer ST maybe recessed to expose the upper portions of the first and second activepatterns AP1 and AP2. An amount of the recessing may be smaller in aportion of the device isolation layer ST, which is located betweenadjacent ones of the first active patterns AP1 or between adjacent onesof the second active patterns AP2, than at other portions of the deviceisolation layer ST.

The recess amount of the second device isolation layer ST2 may begreater than that of the first device isolation layer ST1. The firstdevice isolation layer ST1 may include the first portion P1, which islocated between adjacent ones of the active patterns AP1 or AP2, and thesecond portion P2, which is located between the second device isolationlayer ST2 and the active pattern AP1 or AP2. The recess amount of thesecond portion P2 may be greater than that of the first portion P1.

The first portion P1 of the first device isolation layer ST1 may havethe first top surface TS1, the second portion P2 of the first deviceisolation layer ST1 may have the second top surface TS2, and the seconddevice isolation layer ST2 may have the third top surface TS3. Thesecond top surface TS2 and the third top surface TS3 may besubstantially coplanar with each other. The first top surface TS1 may behigher than the second top surface TS2 and the third top surface TS3.

The sacrificial patterns PP may be formed to cross the first and secondactive patterns AP1 and AP2. A pair of the gate spacers GS may be formedon opposite sidewalls of each of the sacrificial patterns PP. The firstand second source/drain patterns SD1 and SD2 may be formed at oppositesides of each of the sacrificial patterns PP.

Referring back to FIGS. 20 and 21A to 21C, the sacrificial patterns PPmay be replaced with the gate electrodes GE. The first and secondinterlayer insulating layers 110 and 120 may be formed on the substrate100. The active contacts AC may be formed to penetrate the first andsecond interlayer insulating layers 110 and 120 and may be coupled tothe first and second source/drain patterns SD1 and SD2.

As described above, embodiments relate to a semiconductor deviceincluding a field effect transistor and a method of fabricating thesame.

Embodiments may provide a semiconductor device in which field effecttransistors with improved electric characteristics are provided, and amethod of fabricating the same.

According to some example embodiments, a method of fabricating asemiconductor device may include a process to provide a densified deviceisolation layer. A device isolation layer may be formed to completelyfill a trench having a high aspect ratio. The device isolation layerfilling the trench may be completely oxidized and, thus, the deviceisolation layer may be formed of silicon oxide, or to have substantiallythe same chemical structure as a silicon oxide layer.

According to some example embodiments, it may be possible to reduce astress exerted to neighboring active patterns from the device isolationlayer and thereby reduce or prevent deformation of the active patterns.

According to some example embodiments, an annealing process may beperformed at a relatively low temperature in forming a device isolationlayer and, thus, it may be possible to reduce or prevent deteriorationof a junction isolation property between well regions.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

What is claimed is:
 1. A method of fabricating a semiconductor device,the method comprising: patterning a substrate to form active patterns;and forming a device isolation layer to fill a trench between the activepatterns, wherein: forming the device isolation layer includes: forminga preliminary insulating layer on the substrate to fill the trench;injecting a light species into the preliminary insulating layer byperforming a first ion implantation process; and performing a wetannealing process on the preliminary insulating layer, the first ionimplantation process is performed at a temperature of 100° C. to 600°C., and the light species includes H, He, C, N, O, Ar, Kr, or Xe.
 2. Themethod as claimed in claim 1, wherein forming the device isolation layerfurther includes performing a bake process on the preliminary insulatinglayer while providing an oxygen source onto the preliminary insulatinglayer, before performing the first ion implantation process.
 3. Themethod as claimed in claim 1, wherein forming the preliminary insulatinglayer includes performing a flowable chemical vapor deposition process.4. The method as claimed in claim 1, wherein: the preliminary insulatinglayer includes Si—N, Si—H, and N—H bonds, and the first ion implantationprocess includes breaking at least one of the Si—N, Si—H, and N—H bondsin the preliminary insulating layer using accelerated ions.
 5. Themethod as claimed in claim 1, wherein the first ion implantation processincludes injecting the light species into the preliminary insulatinglayer filling the trench.
 6. The method as claimed in claim 1, furthercomprising injecting an impurity into the substrate to form a wellregion, before forming the active patterns.
 7. The method as claimed inclaim 1, wherein the first ion implantation process is performed at anion energy of 10 keV to 150 keV and at a dose of 1.00 E13/cm² to 1.00E17/cm².
 8. The method as claimed in claim 1, further comprising:forming a gate electrode on the active patterns; and forming aninterlayer insulating layer to cover the gate electrode, forming theinterlayer insulating layer including performing a second ionimplantation process using the light species.
 9. The method as claimedin claim 1, wherein: the active patterns include a first active pattern,a second active pattern, and a third active pattern, the trenchincludes: a first trench between the first and second active patternsadjacent to each other, and a second trench between the second and thirdactive patterns adjacent to each other, and an upper width of the secondtrench is greater than an upper width of the first trench.
 10. Themethod as claimed in claim 1, further comprising recessing the deviceisolation layer to expose upper portions of the active patterns,wherein: the active patterns include a first active pattern and a secondactive pattern, which are adjacent to each other, and the deviceisolation layer includes: a first portion interposed between the firstand second active patterns to cover a first sidewall of the first activepattern; and a second portion covering a second sidewall opposite to thefirst sidewall of the first active pattern, the second portion beingrecessed to have a level of a top surface that is lower than a level ofa top surface of the first portion.
 11. A method of fabricating asemiconductor device, the method comprising: patterning a substrate toform active patterns; forming a device isolation layer to fill a trenchbetween the active patterns; forming a sacrificial pattern crossing theactive patterns; forming an interlayer insulating layer on thesacrificial pattern; and replacing the sacrificial pattern into a gateelectrode, wherein: forming the interlayer insulating layer includes:forming a preliminary insulating layer on the sacrificial pattern,injecting a light species into the preliminary insulating layer byperforming an ion implantation process, and performing a wet annealingprocess on the preliminary insulating layer, the ion implantationprocess is performed at a temperature of 100° C. to 600° C., and thelight species includes H, He, C, N, O, Ar, Kr, or Xe.
 12. The method asclaimed in claim 11, wherein forming the interlayer insulating layerfurther includes performing a bake process on the preliminary insulatinglayer while providing an oxygen source onto the preliminary insulatinglayer, before performing the ion implantation process.
 13. The method asclaimed in claim 11, wherein forming the preliminary insulating layerincludes performing a flowable chemical vapor deposition process. 14.The method as claimed in claim 11, wherein: the preliminary insulatinglayer includes Si—N, Si—H, and N—H bonds, and the ion implantationprocess includes breaking at least one of the Si—N, Si—H, and N—H bondsin the preliminary insulating layer using accelerated ions.
 15. Themethod as claimed in claim 11, wherein the ion implantation process isperformed at an ion energy of 10 keV to 150 keV and at a dose of 1.00E13/cm² to 1.00 E17/cm².
 16. A method of fabricating a semiconductordevice, the method comprising: forming a preliminary insulating layer ona substrate; performing a bake process on the preliminary insulatinglayer while providing an oxygen source onto the preliminary insulatinglayer; injecting a light species into the preliminary insulating layerby performing an ion implantation process; and forming a silicon oxidelayer from the preliminary insulating layer by performing a wetannealing process on the preliminary insulating layer, wherein the ionimplantation process is performed at a temperature of 100° C. to 600°C., and wherein the light species includes H, He, C, N, O, Ar, Kr, orXe.
 17. The method as claimed in claim 16, wherein forming thepreliminary insulating layer includes performing a flowable chemicalvapor deposition process.
 18. The method as claimed in claim 16,wherein: the preliminary insulating layer includes Si—N, Si—H, and N—Hbonds, and the ion implantation process includes breaking at least oneof the Si—N, Si—H, and N—H bonds in the preliminary insulating layerusing accelerated ions.
 19. The method as claimed in claim 16, whereinthe ion implantation process is performed at an ion energy of 10 keV to150 keV and at a dose of 1.00 E13/cm² to 1.00 E17/cm².
 20. The method asclaimed in claim 16, wherein the ion implantation process includesinjecting the light species into the preliminary insulating layerfilling a trench.